Processes
List of processes
Inelastic electron scattering
The inelastic mean free path $\lambda_{peh}^{-1}$ for a charge particle in a crystalline material can be obtained using the dielectric permittivity $\varepsilon(\omega,q)$ [1]:
Here, $Ze$ is the particle charge, $a_{B}$ is the Bohr radius for hydrogen, $m_{e}$ is the electron mass, $\hbar$ is the reduced Planck constant, $v(E) = c \frac{\sqrt{E(E+2mc^{2})}}{E+2mc^{{2}}}$ is the particle velocity, $m$ is the particle mass, $c$ is the light velocity.
The dielectric permittivity can be calculated using the TDDFT method or the more accurate GW+BSE approach implemented in the Quantum Espresso package [2].
For ionic crystals imaginary part $\varepsilon_{2}(\omega, 0)$ of the dielectric permittivity can be obtained by using the photoexcitation cross section $\sigma_{i}$ of atomic shells of components presented in the Evaluated Photon Data Library (EPDL97) [3] taking into account the correction of the population $\Delta f_{i}$ and the energy $\Delta E_{i}$ of atomic shells:
For ionic crystals imaginary part $\varepsilon_{2}(\omega, 0)$ of the dielectric permittivity can be obtained by using the photoexcitation cross section $\sigma_{i}$ of atomic shells of components presented in the Evaluated Photon Data Library (EPDL97) [3] taking into account the correction of the population $\Delta f_{i}$ and the energy $\Delta E_{i}$ of atomic shells:
Here, $n$ is the refractive index, $f_{i}$ is the population of i-th atomic shell, $N_{i}$ is the concentration of i-th-atomic-shell-related element.
To extrapolate the dielectric permittivity for the case of nonzero $q$, the Generalized Oscillator Strength (GOS) approximation can be used [1]:
To extrapolate the dielectric permittivity for the case of nonzero $q$, the Generalized Oscillator Strength (GOS) approximation can be used [1]:
The Kramers-Kronig relations can be used to obtain the real part $\varepsilon_{1}(\omega, q)$ of the dielectric permittivity to correct the energy loss function:
Auger process
The rate of Auger decay $\tau_{hhe}^{-1}$ ($\sim 10^{15} s^{-1}$) for a core hole can be calculated as follows [4]:
with
Here, $g_{h}(E)$ is the density of states in the valence and core bands of a crystal, $V$ is the crystal volume, $v$ is the volume of the unit cell, $u_{n,\vec{k}}(\vec{r})$ is the periodic part of the Bloch function: $\psi_{n,\vec{k}}(\vec{r}) = \frac{1}{\sqrt{V}} u_{n,\vec{k}}(\vec{r}) e^{i \vec{k} \cdot \vec{r}}$.
Electron(hole)-phonon scattering
DFT packages such as Quantum Espresso [2] can be used to calculate the carrier-phonon scattering rate with high accuracy for both single crystals and substitutional solid solutions.
The electron(hole)-phonon scattering rate $\tau_{ph, _{abs}^{em}}^{-1}$ can be evaluated assuming the single parabolic band approximation in the approximations of the Fröhlich polarization and the deformational potential [5]:
The electron(hole)-phonon scattering rate $\tau_{ph, _{abs}^{em}}^{-1}$ can be evaluated assuming the single parabolic band approximation in the approximations of the Fröhlich polarization and the deformational potential [5]:
with
Here, $m^{*}$ is the effective electron(hole) mass, $\Omega_{LO,s}$ is the longitudinal optical phonon frequency, $\varepsilon_{0}$ is the vacuum permittivity, $e$ is the electron charge, $k_{B}$ is the Boltzmann constant, $\tilde{\varepsilon}_{s}$ is the effective dielectric permittivity, $\rho$ is the crystal density, $c_{L}$ is the longitudinal sound velocity, $\sigma_{d}$ is the acoustical deformation potential, $e_{14}$ is the piezoelectric constant, $\varepsilon_{st}$ is the static dielectric permittivity, $\lambda^{2}_{TF}$ is the Thomas-Fermi screening length.
The electron(hole)-phonon scattering rate $\tau_{ph, _{abs}^{em}, disorder}^{-1}$ in a substitutional solid solution can be calculated by integrating $\tau_{ph, _{abs}^{em}}^{-1}$ with the semiclassical confining potential $E_{0}(\vec{r})$, which is evaluated using the local landscape method [7]:
The electron(hole)-phonon scattering rate $\tau_{ph, _{abs}^{em}, disorder}^{-1}$ in a substitutional solid solution can be calculated by integrating $\tau_{ph, _{abs}^{em}}^{-1}$ with the semiclassical confining potential $E_{0}(\vec{r})$, which is evaluated using the local landscape method [7]:
with
The semiclassical confining potential \(E_{0}(\vec{r})\) can be obtained by solving the following equation:
with the periodic boundary conditions
Here, $u(\vec{r})$ is the disorder-induced potential fluctuations in the quasiclassical approximation, $m^{*}_{vc}$ is the electron (hole) effective mass in the virtual crystal.
Alloy scattering
The alloy scattering rate $\tau_{el}^{-1}$ in crystalline compound can be calculated using the CPA-based method [6]:
Here, $\hat{H}_{vc}$ is the virtual crystal Hamiltonian, $\hat{H}^{AC}$ and $\hat{H}^{BC}$ are the Hamiltonians for AC and BC single crystals in the single particle approximation, $\varepsilon_{n}^{vc}(\vec{k})$ are the eigenvalues of the virtual crystal Hamiltonian $\hat{H}_{vc}$, $\ket{\phi_{n,\vec{k}}^{vc}}$ are single particle states of the virtual crystal, $\hat{u}$ is the perturbation operator reflecting the effect of disorder-induced potential fluctuations $u(\vec{r})$, $\Sigma_{n, \vec{k}}(E_{n}(\vec{k}))$ are the matrix elements of the self-energy operator $\hat{\Sigma}$ in the basis of the virtual crystal states $\ket{\phi_{n,\vec{k}}^{vc}}$, $E_{n}(\vec{k})$ is the complex carrier energy.
e-h interaction
The dynamics of a charge carrier in the field of other carriers and an external electric $\vec{E}$ or magnetic $\vec{B}$ field is described assuming the quasiclassical approximation as follows:
Here, $\vec{p}_{i}$ and $\vec{v}_{i}$ are the momentum and velocity of ith charge particle, respectively, whereas $q_{i}$ is its charge.
A certain electron-hole pair is considered to be recombined into an exciton at a certain step of the simulation if the following condition is satisfied:
where $E_{k,i}$ and $E_{k,j}$ are the kinetic energies of ith and jth carriers, respectively, whereas $E_{k,ij}^{c}$ is the kinetic energy of them center of mass.
The electron-hole or exciton recombination into a photon is described by empirical parameters.
Exciton decay
Excitation capture and transfer
The black-capture-sphere model can used to estimate the probability of carrier capture by emission centers [4].
The excitation transfer rate $w_{T_{1} \rightarrow T_{2}}$ from donor $T_{1}$ to acceptor $T_{2}$ separated by the distance $r$ is calculated as follows [8]:
The excitation transfer rate $w_{T_{1} \rightarrow T_{2}}$ from donor $T_{1}$ to acceptor $T_{2}$ separated by the distance $r$ is calculated as follows [8]:
where $\tau_{T_{1}}$ is the emission decay time of donor state $T_{1}$, $R_{d-d, T_{1} \rightarrow T_{2}}$ is the dipole-dipole transfer radius between donor state $T_{1}$ and acceptor state $T_{2}$, $\alpha_{T_{1} \rightarrow T_{2}}$ is the Dexter transfer radius, and $c_{T_{1} \rightarrow T_{2}}$ is the frequency factor.
Activation center decay
Usually the decay time of a certain activation center in a certain matrix host can be obtained experimentally and then used for general simulation.


